Greatly suppressed potential inhomogeneity and performance improvement of c-plane InGaN green laser diodes

Improving Blue InGaN Laser Diodes Performance with Waveguide Structure Engineering

To enhance lasers’ power and improve their performance, a model wasapplied for the waveguide design of 400 nm InGaN/InGaN semiconductor laser, whichis much easier to implement. The conventional and new laser structures weretheoretically investigated using simulation software PICS3D, which self-consistentlycombines 3D simulation of carrier transport, self-heating, and opt...

InGaN-BASED LASER DIODES

UV InGaN and GaN single-quantum well structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. When the emission wavelength of UV InGaN LEDs was shorter than 380 nm, the external quantum efficiency (EQE) of the LED on ELOG was much higher than that on sapphire, but only for highcurrent operation. At low-current operation, both LEDs ...

High-Power Pure Blue InGaN Laser Diodes

We fabricated high-power pure blue laser diodes (LDs) by using GaN-based material for full-color laser display. The operating output power, voltage and wall-plug efficiency of the LDs at forward current of 1.0 A were 1.17 W, 4.81 V and 24.3%, respectively. The estimated lifetime of the LDs was over 30,000 hours under continuous-wave operation. key words: InGaN, GaN, high-power laser, blue LD

Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes

Static and Dynamic Characteristics of Ingan-based Laser Diodes

III-nitride-based laser diodes (LDs) are compact and efficient source of highly coherent continuous wave light for optoelectronic applications in the short-wavelength range (λ ∼ 400 nm). High peak-power and short-pulse generation in this spectral range has not yet been attempted and is of particular interest for applications such as, e.g., the next-generation of high-density optical data storag...